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近年来,铁电薄膜已经成为新型功能材料和微器件研究领域的热点.使用铁电薄膜代替普通场效应晶体管中的栅介质层而制成的铁电效应晶体管(FeFET)因其非挥发性存储、非破坏性读出、高读写速度和低静态功耗等优势成为最有潜力的下一代新型存储器件之一.
应变、退极化和空间电荷对FeFET电学性能影响的相场模拟
【摘 要】
：
近年来,铁电薄膜已经成为新型功能材料和微器件研究领域的热点.使用铁电薄膜代替普通场效应晶体管中的栅介质层而制成的铁电效应晶体管(FeFET)因其非挥发性存储、非破坏性读出、高读写速度和低静态功耗等优势成为最有潜力的下一代新型存储器件之一.
【机 构】
：
湖南省湘潭市雨湖区湘潭大学材料与光电物理学院9010＃,411105
【出 处】
：
中国物理学会2012年秋季学术会议
【发表日期】
：
2012年9期
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