Owning to the characteristics of wide direct band gap (3.37 eV) and large exciton binding energy (60 meV) at room temperature, ZnO material becomes a potential candidate for preparing high luminous efficiency UV/visible light emitting diodes (LEDs) and laser diodes (LDs).Moreover,the preparation of high quality ZnO single crystals with near-intrinsic carrier mobility is essential for the in-depth research on the ZnO material.