论文部分内容阅读
Large Q.f Product for HBAR using smart cut TM reported LiNbO3 on LiNbO3 substrate
【作 者】
：
【机 构】
：
CEA-LETI,Grenoble,FranceSilicon-on-InsulatorTechnologies(SOITEC),38926CrollesCedex,FranceFemtoST,UMR
【出 处】
：
2008 IEEE International Ultrasonics Symposium(IUS)(2008 IEEE
【发表日期】
：
2008年11期
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