Silicon MOS technology,developed over decades,has been a cornerstone of mainstream microelectronics.Common wisdom tends to say that quantum information processing based on individual electron spins in semiconductors will require new materials and new technology.However,recently several groups around the world have demonstrated both unprecedented device stability and the abilities to control and to measure single spins on electrostatic quantum dots made out of conventional Si MOS materials.In this talk,I would like to describe our experimental activities at UCLA to develop this type of qubits.A measurement of spin-lattice relaxation time of individual spins in the presence of a magnetic field,using a pump-and-probe technique,will be presented.Our detection of electron spin resonance and measurement of inhomogenous phase decoherence time of a single spin,that reveal novel spin-valley physics,will be reported.Preliminary results of an exchange-only spin qubit will also be discussed.