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N元素由于其核外电子结构和原子半径与O十分相近,被认为是最适合用来制备p型ZnO(p-ZnO)半导体材料的掺杂元素。有关N掺p-ZnO的研究已经进行了很长时间,并且获得了许多重要成果。然而,目前对N掺杂ZnO的p型导电性的由来仍然存在极大的争议,研究者提出了多种N掺杂ZnO中可能存在的浅受主形式,包括N_o,N_o-V_(Zn),V_(Zn)-N_o-H~+等形式。在此,本文通过对不同的受主形式进行介绍与归纳,指出可能的N掺杂机理,希望能够有助于对后期实验工作的指导。
The N element is considered to be the most suitable doping element for the preparation of p-type ZnO (p-ZnO) semiconductor material due to its extranuclear electron structure and atomic radius close to O. Research on N-doped p-ZnO has been carried out for a long time and many important achievements have been obtained. However, the origin of p-type conductivity of N-doped ZnO is still very much controversial. The researchers proposed shallow acceptor forms that may exist in many N-doped ZnO, including N_o, N_o-V_ (Zn) , V_ (Zn) -N_o-H ~ + and other forms. In this paper, the author introduces and summarizes different acceptor forms and points out the possible mechanism of N-doping, hoping to help guide the later experiments.