NEA活化实验是利用体单晶材料进行的,未经任何外延或真空解理手续。为确立活化工艺,特别是表面清洁处理规范,作了相应AES分析。借助于测量样品附近高纯Al的熔点以校准及控制样品表面的温度。在不太好的本底真空(2×10~(-7)—6×10~(-7)Pa)条件下,活化好的GaAs样品之白光光电灵敏度可达1000μA/lm以上。 NEA activation experiment is the use of bulk single crystal material, without any extension or vacuum cleavage procedures. In order to establish the activation process, especially the surface cleaning process, the corresponding AES analysis was made. Calibrate and control the temperature of the sample surface by measuring the melting point of high purity Al near the sample. Under the not-so-good background vacuum (2 × 10 -7 -6 × 10 -7 Pa), the white photosensitivity of activated GaAs samples can reach over 1000 μA / lm.