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前言近几年来,由于半导体工艺和线路的不断改进,半导体存贮器有了很大的发展。在半导体存贮器中,目前主要生产和发展的有MOS存贮器和双极存贮器。因为双极存贮器比MOS存贮器速度快,所以到目前为止,在一些专用和高速计算机中,双极存贮器的应用仍占重要地位。双极存贮器的存贮单元,先后出现过多发射极耦合、二极管耦合、开关收集极等多种电路形式。到1972年,Intel公司在一个基片上集成256个单元的双极随机存贮器已商品化。我们遵照毛主席“洋为中用”的教导,解剖了一块双极随机存贮器组件,现将初步结果概述如下:
Preface In recent years, due to the continuous improvement of semiconductor technology and circuits, semiconductor memory has made great progress. In semiconductor memory, MOS memory and bipolar memory are currently mainly produced and developed. Because bipolar memories are faster than MOS memories, application of bipolar memories has so far assumed an important position in some specialized and high-speed computers. Bipolar memory storage unit, there have been too many emitter coupling, diode coupling, switch collector and other circuit forms. By 1972, Intel Corp. had 256 units of bipolar random access memory on a single substrate commercially available. Following the teachings of Chairman Mao’s “Western Learning”, we dissected a bipolar random access memory (RAM) component. The preliminary results are summarized as follows: