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研究了(100)GaAs衬底上,离子注入自对准 WSi_x栅 GaAs MESFET的阈值电压漂移与栅长和取向的关系。当栅长小于2μm时,栅不同取向的阈值电压差别很大.本文同样将解析模型与已有的(111)GaAs衬底的实验进行了比较.结果表明解析模型与实验符合较好.
The relationship between the threshold voltage drift and the gate length and orientation of (100) GaAs substrate with self-aligned WSi_x gate GaAs MESFETs was investigated. When the gate length is less than 2μm, the threshold voltages of the gate with different orientations are very different.This paper also compares the analytical model with the existing (111) GaAs substrate.The results show that the analytical model is in good agreement with the experiment.