论文部分内容阅读
采用磁控溅射技术在p-Si(100)衬底上生长了Gd2O3掺杂HfO2(GDH)高k薄膜,制备了GDH/Si和GDH/Al2O3/Si两种堆栈层。结果表明Al2O3界面钝化使漏电流密度降低了两个数量级,并改善了回滞窗口和平带电压的偏移。高温N2退火对堆栈层电学性能影响明显:随着温度的增加,界面性能逐步改善,退火温度为900℃时,回滞窗口小于20 mV,积累区趋势平缓并且单位面积电容值增大,薄膜介电常数为20。
Gd2O3-doped HfO2 (GDH) high-k thin films were grown on p-Si (100) substrate by magnetron sputtering, and two kinds of stack layers GDH / Si and GDH / Al2O3 / Si were prepared. The results show that the passivation of Al2O3 interface reduces the leakage current density by two orders of magnitude, and improves the offset of the hysteresis window and flat band voltage. The effect of high temperature N2 annealing on the electrical properties of the stack is obvious: with the increase of temperature, the interface performance is improved gradually. When the annealing temperature is 900 ℃, the hysteresis window is less than 20 mV, the accumulation area tends to be flat and the capacitance per unit area increases, The electrical constant is 20.