论文部分内容阅读
在高纯氮气气氛中采用有机前驱体热解法合成了氮化硅纳米线,对氮化硅纳米线所进行的详细的微观表征表明它们具有良好的单晶特性,其生长沿着α-Si3N4的[1010]方向并受VS机制所控制。在室温下用325nm激光对样品激发,观察到样品有很宽的强光致发光带,在实验中用肉眼即能观察到从样品所发出的强光。考虑到通过稀土掺杂(如引入Nd、Eu、Er和Yb)等手段能够降低氮化硅纳米结构的能带从而进一步调控其光学性能,可以相信氮化硅纳米线在防伪发光材料领域将有着广阔的开发潜力。
Silicon nitride nanowires were synthesized by pyrolysis of organic precursors in a high purity nitrogen atmosphere. The detailed microscopic characterization of the silicon nitride nanowires shows that they have good single crystal properties and grow along the α-Si3N4 [1010] direction and controlled by the VS mechanism. The sample was excited with a 325 nm laser at room temperature and the sample was observed to have a strong, strong photoluminescence band. The intense light emitted from the sample was observed with the naked eye during the experiment. Taking into account the adoption of rare earth doping (such as the introduction of Nd, Eu, Er and Yb) and other means to reduce the energy band of silicon nitride nanostructures to further adjust its optical properties, it is believed that silicon nitride nanowires in the field of anti-counterfeit light-emitting materials will have Broad development potential.