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采用脉冲激光沉积 (PLD)工艺 ,制备了以Bi4Ti3O1 2 (BIT)为过渡阻挡层的Au PZT BIT p Si异质结 .研究了BIT铁电层对Pb(Zr0 .5 2 Ti0 .48)O3(PZT)薄膜晶相结构、铁电及介电性能的影响 ,对Au PZT BIT p Si异质结的导电机制进行了讨论 .氧气氛 5 30℃淀积的PZT为多晶铁电薄膜 ,与直接淀积在Si基片上相比 ,加入BIT铁电层后PZT铁电薄膜的 (110 )取向更加明显 ;在铁电层总厚度均为 40 0nm的情况下 ,PZT BIT双层铁电薄膜比PZT单层铁电薄膜具有更大的剩余极化和更低的矫顽场 ;观察到顺时针回滞的C V特性曲线 ,表明铁电极化控制了硅的表面势 ,薄膜呈现极化开关的特性 ;I V特性曲线表明异质结具有明显的单向导电性 ,并证实异质结在弱场下导电遵循欧姆定律 ,强场下以空间电荷限制电流 (SCLC)为主 ;异质结具有较好的疲劳特性 ,10 9次极化反转后其剩余极化仍达到初始值的90 % .
The Au PZT BIT p Si heterojunction with Bi 4 Ti 3 O 1 2 (BIT) as the transitional barrier was prepared by pulsed laser deposition (PLD). The effects of BIT ferroelectric layer on the electrochemical properties of Pb (Zr0.5 Ti0.48) O3 PZT) thin films, the ferroelectric and dielectric properties of Au PZT BIT p Si heterostructures were investigated.The PZT deposited at 30 ℃ in oxygen atmosphere was a polycrystalline ferroelectric thin film, (110) orientation of the PZT ferroelectric thin film is more obvious than that of the PZT ferroelectric thin film deposited on the Si substrate. When the total thickness of the ferroelectric layer is 40 0 nm, the PZT BIT double-layer ferroelectric thin film is more stable than the PZT The monolayer ferroelectric thin films have larger remanent polarization and lower coercive field. The CV curve of clockwise hysteresis is observed, indicating that the ferroelectric polarization controls the surface potential of silicon and the film exhibits the characteristics of polarization switch. IV curves show that the heterojunctions have obvious unidirectional conductivity and confirm that the heterojunction follows the Ohm’s law in the weak field and the space charge-limited current (SCLC) is dominant in the strong field. The heterojunction has good Fatigue characteristics, the residual polarization after 109 polarization reversal still reach 90% of the initial value.