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采用XeCl脉冲准分子激光器,在10Pa的Ar气环境下,烧蚀高阻单晶Si靶,分别在距靶3cm的玻璃和单晶Si衬底上制备了纳米Si薄膜.相应的Raman谱和x射线衍射谱均证实了薄膜中纳米Si晶粒的形成.扫描电子显微镜图像显示,所形成的薄膜呈均匀的纳米Si晶粒镶嵌结构.相应的光致发光峰位出现在599nm,峰值半高宽为56nm,与相同参数下以He气为缓冲气体的结果相比,具有较窄的光致发光谱,并显示出谱峰蓝移现象.
XeCl pulsed excimer laser was used to ablate high-resistance single-crystal Si target under Ar atmosphere of 10Pa, and nano-Si thin films were prepared on glass and single-crystal Si substrate with distance of 3cm respectively.The corresponding Raman spectra and x Ray diffraction spectra confirmed the formation of nano-Si grains in the film.The scanning electron microscopy images showed that the film was uniform nano-Si grain mosaic structure.The corresponding photoluminescence peak appeared at 599nm, the peak width at half maximum Is 56nm. Compared with the result of He gas as buffer gas under the same parameters, it has a narrower photoluminescence spectrum and shows a blue shift of the peak.