【摘 要】
：
We present a new charge trapping memory (CTM) device with the Au/Ga2O3/SiO2/Si structure,which is fabricated by using the magnetron sputtering,high-temperature
【机 构】
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Key Laboratory of Optoelectronic Information Materials of Hebei Province, Key Laboratory of Digital
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We present a new charge trapping memory (CTM) device with the Au/Ga2O3/SiO2/Si structure,which is fabricated by using the magnetron sputtering,high-temperature annealing,and vacuum evaporation techniques.Transmission electron microscopy diagrams show that the thickness of the SiO2 tunneling layer can be controlled by the annealing temperature.When the devices are annealed at 760 ℃,the measured C-V hysteresis curves exhibit a maximum 6 V memory window under a ±13 V sweeping voltage.In addition,a slight degradation of the device voltage and capacitance indicates the robust retention properties of flat-band voltage and high/low state capacitance.These distinctive advantages are attributed to oxygen vacancies and inter-diffusion layers,which play a critical role in the charge trapping process.
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