【摘 要】
：
新一代场终止型(field stop,FS)绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)的仿真模型目前都是采用传统穿通型(punch through,PT)IGBT的建模方法,由于FS结
【机 构】
：
舰船综合电力技术国防科技重点实验室(海军工程大学),
论文部分内容阅读
新一代场终止型(field stop,FS)绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)的仿真模型目前都是采用传统穿通型(punch through,PT)IGBT的建模方法,由于FS结构与PT结构在厚度、掺杂浓度等方面都存在很大的不同,不可避免的会存在较大的偏差。在对已有PT模型进行理论分析和公式推导的基础上,根据FS型IGBT的结构特点和工作机制,在场终止层内采用了大注入的假设条件,同时考虑基区内载流子的复合作用,提出了一种改进的FS型开关瞬态模型。通过2种模型仿真波形与实测波形的比较,验证了该模型具有更高的准确性。
The simulation models of a new generation of field stop (FS) insulated gate bipolar transistors (IGBT) are currently modeling methods using conventional punch through (PT) IGBTs. Since the FS structure And PT structure in the thickness, doping concentration and so there is a big difference, there will inevitably be a larger deviation. Based on the theoretical analysis and formula derivation of the existing PT model, according to the structural characteristics and working mechanism of the FS type IGBT, the assumption of large injection is adopted in the field termination layer, and the recombination of carriers in the base region , Proposed an improved FS type switch transient model. By comparing the two kinds of model simulation waveforms with the measured waveforms, the model is verified to be more accurate.
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