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对GaN基白光二极管(LED)分别施加-1 600、-1 200、-800、-400、400、800、1 200和1 600V静电打击,每次静电打击后,测量LED电学参数和光学参数的变化。从理论上分析了静电对LED可靠性的影响。实验表明:LED样品的I-V特性曲线及光学参数,受反向静电打击的影响比较大,而受正向静电打击的影响不明显。LED样品在被反向静电打击后,芯片内部产生二次缺陷和熔融通道,导致其I-V曲线变形,光通量减小,老化性能衰减速率加快。在1 600V范围内,LED可靠性受正向静电影响不明显。
The GaN-based white LEDs (LED) were applied with -1 600, -1 200, -800, -400, 400, 800, 1 200 and 1 600 V electrostatic strikes respectively. After each electrostatic strike, the LED electrical and optical parameters Variety. The effect of static electricity on LED reliability is theoretically analyzed. Experiments show that: the I-V characteristic curve and optical parameters of LED samples are greatly affected by the reverse electrostatic impact, but the impact of the positive electrostatic impact is not obvious. After the LED sample is impacted by the reverse static electricity, the secondary defect and the molten channel are generated in the chip, resulting in the deformation of the I-V curve, the decrease of the luminous flux and the decay rate of the aging performance. In the range of 1 600V, LED reliability is not obvious by the positive electrostatic effect.