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采用熔盐脉冲电沉积法在纯铌表面渗硅,利用辉光放电光谱仪(GDOES)、扫描电镜(SEM)和能谱仪(EDS)、X射线衍射仪(XRD)分析不同电流密度对渗硅层厚度、成分、组织及相结构的影响,并对渗硅层的抗氧化性进行了研究。结果表明,渗硅层厚度随电流密度的增大而增加,超过100 m A/cm2厚度增加缓慢。渗硅层晶粒随电流密度的增加由粗大变得细小。渗层与基体结合紧密,渗层组织较均匀整齐,致密无孔洞。渗硅层由单相Nb Si2组成,在(110)和(200)晶面上择优生长。Nb Si2渗层提高了纯铌的抗氧化性。
Molten salt pulse electrodeposition was used to saturate the surface of pure niobium. The surface area of pure niobium was analyzed by using GDOES, SEM and EDS, and X-ray diffraction (XRD) Layer thickness, composition, microstructure and phase structure, and the oxidation resistance of the silicon layer was studied. The results show that the thickness of the siliconized layer increases with the increase of the current density, while the thickness of more than 100 m A / cm2 increases slowly. The grain size of the SiC layer changes from coarse to coarse with the increase of current density. The infiltration layer and the substrate are closely integrated, and the tissue of the infiltration layer is more even and tidy with no holes in the dense. The osmosis layer consists of single-phase NbSi2 and preferentially grows on the (110) and (200) planes. The Nb Si2 layer improves the oxidation resistance of pure niobium.