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休斯研究实验室的科学家们设计并制造了一种晶体管。据报道,其截止频率可达300GHz。这种器件还能给出很低的噪声和高的增益特性。为了减小源-漏间的距离,采用了一种自对准栅技术。利用这种技术和另一种高对准度电子束曝光系统,科学家们能制造出一种栅长只有650(?)(0.065μm)的器件,而且栅到沟道的间距可减小50％,这就能使增益和频率显著提高。高电子迁移率晶体管(HEMT)
Scientists at Hughes Research Laboratories have designed and built a transistor. It is reported that its cut-off frequency up to 300GHz. This device can also give very low noise and high gain characteristics. In order to reduce the source - drain distance, using a self-aligned gate technology. Using this technique and another high-alignment electron beam exposure system, scientists can create a device with a gate length of only 650 μm (0.065 μm) and reduce the gate-to-channel spacing by 50% This will result in significant gains and frequencies. High Electron Mobility Transistor (HEMT)