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为了解决Mg2Si传统制备方法中Mg的氧化、挥发等问题,采用微波低温固相反应法合成Mg2Si热电材料。用XRD分析手段研究合成产物的结构及相组成。在300到700K的温度范围内,对材料的电导率、Seebeck系数和热导率随温度的变化进行测量。结果表明,当Mg过量8%、加热功率为2.5kW时,于853K保温30min,可以得到单相Mg2Si热电化合物。在测试温度范围内,Mg2Si具有较高的品质因数ZT值,在600K温度下达到0.13。
In order to solve the problem of Mg oxidation and volatilization in the traditional Mg2Si preparation method, Mg2Si thermoelectric material was synthesized by microwave solid-state reaction at low temperature. The structure and phase composition of the synthesized product were studied by XRD analysis. The conductivity, Seebeck coefficient and thermal conductivity of the material are measured as a function of temperature over a temperature range of 300 to 700K. The results show that the single phase Mg2Si thermoelectric compound can be obtained when the Mg content is over 8% and the heating power is 2.5kW at 853K for 30min. Within the test temperature range, Mg2Si has a higher figure of merit, ZT, reaching 0.13 at 600K.