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采用三元InGaAs体材料为有源区,通过直接在InGaAs体材料中引入020%张应变来加强TM模的增益,研制了一种适合于作波长变换器的偏振不灵敏半导体光放大器(SOA)。在低压金属有机化学气相外延(LPMOVPE)的过程中,只需调节三甲基Ga的源流量便可获得所要求的张应变量。制作的半导体光放大器在200mA的注入电流下,获得了50nm宽的3dB光带宽和小于05dB的增益抖动;重要的是,半导体光放大器能在较大的电流和波长范围里实现小于11dB的偏振灵敏度。对于155μm波长的信号光,在200mA的偏置下,其偏振灵敏度小于1dB,同时获得了大于14dB光纤到光纤的增益,3dBm的饱和输出功率和大于30dB的芯片增益。用作波长变换器,可获得较高的波长变换效率。进一步提高半导体光放大器与光纤的耦合效率,可得到性能更佳的半导体光放大器。
Using the ternary InGaAs bulk material as the active region, the gain of the TM mode is enhanced by introducing a strain of 020% directly into the InGaAs bulk material. A polarization insensitive semiconductor optical amplifier (SOA) suitable for a wavelength converter is developed. . In the process of LPMOVPE, the required tensile strain can be obtained by simply adjusting the source flow rate of trimethyl Ga. The fabricated semiconductor optical amplifier achieves a 3dB optical bandwidth of 50 nm wide and gain jitter of less than 05 dB at an injection current of 200 mA; importantly, the semiconductor optical amplifier achieves a polarization sensitivity of less than 11 dB over a large current and wavelength range . For the signal light of 155μm wavelength, its polarization sensitivity is less than 1dB at 200mA bias, meanwhile the gain of more than 14dB fiber to fiber, the saturated output power of 3dBm and the chip gain of more than 30dB are obtained. Used as a wavelength converter, you can get a higher wavelength conversion efficiency. To further improve the semiconductor optical amplifier and fiber coupling efficiency, better performance can be obtained semiconductor optical amplifier.