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采用直流脉冲反应磁控溅射方法生长W掺杂ZnO(ZnO:W,即WZO)透明导电氧化物(TCO)薄膜并研究了氧气流量对薄膜微观结构、组分、表面形貌以及光电性能的影响。实验结果表明,WZO薄膜具有良好的(002)晶面择优取向生长,且适当的氧气流量是制备优质WZO薄膜的关键因素。WZO薄膜表面形貌受薄膜结晶质量的影响。当氧气流量为2.08×10-7 m3/s时,WZO薄膜在400～1 500nm透过率达到84.5%,电阻率为4.61×10-3Ω.cm,迁移率为20.5cm2v-1s-1。XPS测试表明WZO薄膜中Zn和W均处于氧化态,其中W元素呈现W6+价态。
The W-doped ZnO (ZnO: W, WZO) transparent conductive oxide (TCO) thin films were grown by DC pulse reactive magnetron sputtering. The influences of oxygen flow rate on the microstructure, composition, surface morphology and optical properties influences. The experimental results show that the WZO thin film has a good (002) preferred orientation growth, and the proper oxygen flow rate is the key factor for preparing high quality WZO thin films. The surface morphology of WZO film is affected by the quality of the film. When the flow rate of oxygen is 2.08 × 10-7m3 / s, the transmittance of WZO film reaches 84.5% at 400 ~ 1500nm, the resistivity is 4.61 × 10-3Ω.cm and the mobility is 20.5cm2v-1s-1. XPS tests showed that both Zn and W in the WZO film were in an oxidation state, in which the W element exhibited a W6 + valence state.