通过测量经紫外辐照的样品的磁输运特性和复合特性,研究N~+表面累积层对钝化N-Hg_(0.78)Cd_(0.22)Te的影响。紫外辐射使N~+表面层减少,从而使样品的电阻增大,这一现象与钝化氧化层俘获电子有关。观察到紫外辐照可使样品的载流子寿命减小约90%。假设紫外辐射降低了由N~+表面层引起的内建电势,可解释较快的电子-空穴复合速率。被激发成准平带或弱耗尽状态的晶体的电子-空穴复合时间常数较小。N-Hg_(1-x)Cd_xTe表面层状态确定了光电导器件的最终设计。 The effects of N + accumulation on the passivation of N-Hg_ (0.78) Cd_ (0.22) Te were studied by measuring the magnetic transport properties and the recombination properties of UV irradiated samples. Ultraviolet radiation reduces the N + surface layer, increasing the resistance of the sample, a phenomenon that is related to the trapped electrons of the passivated oxide layer. UV irradiation was observed to reduce the carrier lifetime of the sample by about 90%. Assuming that ultraviolet radiation reduces the built-in potential due to the N + surface layer, a faster electron-hole recombination rate can be explained. The crystal excited to a quasi-flat band or weakly depleted state has a smaller electron-hole recombination time constant. The N-Hg_ (1-x) Cd_xTe surface layer state determines the final design of the photoconductive device.