【摘 要】
：
报道了具有全固态绝缘结构的横向型半绝缘GaAs光电导开关的研制和性能测试结果 .其中 8mm电极间隙的GaAs开关暗态绝缘强度达 2 8kV ,分别用ns和ps激光脉冲触发开关的结果表明
【机 构】
：
西安理工大学应用物理系,中国科学院西安光学精密机械研究所瞬态光学技术国家重点实验室,西安理工大学应用物理系,西安理工大学应用物理系 西安710048,西安710068,西安710048,西安71004
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报道了具有全固态绝缘结构的横向型半绝缘GaAs光电导开关的研制和性能测试结果 .其中 8mm电极间隙的GaAs开关暗态绝缘强度达 2 8kV ,分别用ns和ps激光脉冲触发开关的结果表明 ,开关输出电磁脉冲无晃动 ,电流脉冲上升时间小于 2 0 0ps ,脉宽达亚ns,3mm电极间隙的GaAs开关的峰值电流达 5 6 0A ,电磁脉冲重复率 10 8Hz.给出不同电极间隙的GaAs开关工作于线性和lock on状态下的实验结果 ,测试了GaAs开关工作于lock on状态下的光能、电场阈值
Reported the development and performance test results of transverse type semi-insulating GaAs photoconductive switches with all-solid-state insulating structure, in which the dark-state dielectric strength of GaAs switch with 8mm electrode gap was up to 28kV, and the results of switching triggered by ns and ps laser pulses respectively , Switching output electromagnetic pulse without shaking, current pulse rise time less than 200ps, pulse width sub-ns, 3mm gap GaAs switch peak current 560mA, electromagnetic pulse repetition rate 108Hz. Given different electrode gap GaAs switching work in the linear and lock on state experimental results, the test GaAs switch work in lock on state of light energy, electric field threshold
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