中国电子科技集团公司第十三研究所基于自主开发的工艺,成功研制出1 200 V/20 A SiC MOSFET芯片。芯片采用平面沟道结构,在栅极电压20 V、漏极电压2.0 V时,漏源导通电流达20 A,阈值电压达1.6 V,1 200 V下器件的泄漏电流小于10μA,沟道反型层载流子迁移率达17.0 cm2·V~(-1)·s~(-1),n型欧姆接触电阻率小于5×10~(-5)Ω·cm~2,芯片面积为4.5 mm×4.5 mm。该芯片可封装为TO-247形式,应 China Electronics Technology Group Corporation thirteenth Institute based on self-developed technology, the successful development of 1 200 V / 20 A SiC MOSFET chip. The chip adopts a planar channel structure. When the gate voltage is 20 V and the drain voltage is 2.0 V, the drain-source conduction current reaches 20 A, the threshold voltage reaches 1.6 V, and the leakage current of the device under 1 200 V is less than 10 μA. Type carrier mobility is 17.0 cm2 · V -1 s -1, the n-type ohmic contact resistance is less than 5 × 10 -5 Ω · cm 2, and the chip area is 4.5 mm × 4.5 mm. The chip can be packaged as TO-247 form, should