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对 GAT (Gate Associated Transistor)型高速高压功率开关管提出了一些新的结构改进设想 ,包括两种新的平面版图设计以及改变栅区掺杂浓度 ,以解决其最大集电极电流远小于常规双极功率管这个关键问题 ,并对此进行了计算机仿真及试验研究 .仿真及试验结果都证明最大集电极电流得到大幅度提高
Some new structural improvement ideas are proposed for GAT (Gate Associated Transistor) high-speed and high-voltage power switch, including two new layout designs and changing the gate doping concentration to solve the problem that the maximum collector current is much smaller than the conventional bipolar The power tube is the key issue, and computer simulation and experimental research on it.The simulation and experimental results show that the maximum collector current has been greatly improved