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在氩气压力为2.7×10~(-2)毫巴、温度为115～970℃的范围内,在钼基体表面沉积钛膜.镀膜结构的扫描电镜检查表明,产生不同金相组织所需要的温度区间随着放电电压的增高而下降。膜的结构取决于基体温度和放电电压,而膜的生长速率在0.25～0.30微米/分之间变化对膜的结构没有影响。
The titanium film was deposited on the surface of molybdenum substrate under the conditions of argon pressure of 2.7 × 10 ~ (-2) mbar and temperature of 115 ~ 970 ℃ .The scanning electron microscopy of the coating showed that the microstructure of the coating Temperature range decreases with increasing discharge voltage. The structure of the film depends on the substrate temperature and the discharge voltage, and the change of the film growth rate between 0.25 and 0.30 μm / min has no effect on the structure of the film.