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用FeSi2合金靶作为靶材,采用准分子激光沉积法在Si(111)单晶基片上制备了单相的-βFeSi2薄膜,并将飞秒脉冲激光沉积法(PLD)引入到-βFeSi2薄膜的制备工艺中;用X射线衍射仪(XRD),场扫描电镜(FSEM),能谱仪(EDS),紫外可见光光谱仪研究了薄膜的结构、组分、表面形貌和光学性能。基片温度为500℃,采用KrF准分子脉冲激光沉积法可获得单相的-βFeSi2薄膜。衬底温度为550℃时,-βFeSi2出现迷津状薄层。采用飞秒脉冲激光法-βFeSi2薄膜的合成温度比准分子脉冲激光沉积法制备温度低50~100℃;薄膜的晶粒分布均匀连续,没有微米级的微滴;飞秒脉冲激光沉积效率比准分子激光的高1000倍以上,是一种快速高效的-βFeSi2薄膜沉积技术。
The single-phase-βFeSi2 thin films were prepared on the Si (111) single crystal substrate by using the FeSi2 alloy target as the target, and the introduction of the femtosecond pulsed laser deposition (PLD) into the -βFeSi2 thin films The structure, composition, surface morphology and optical properties of the films were investigated by X-ray diffraction (XRD), field scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS) and UV- The temperature of the substrate is 500 ℃. The single-phase -βFeSi2 film can be obtained by KrF excimer laser deposition. When the substrate temperature is 550 ℃, -βFeSi2 appears matskin-like thin layer. The temperature of synthesis ofβ-FeSi2 thin film was lower by 50 ~ 100 ℃ than that of the excimer laser pulse deposition method by the femtosecond pulsed laser method. The grain distribution of the film was uniform and continuous with no micron-sized droplets. The efficiency of femtosecond pulse laser deposition Molecular laser 1000 times higher, is a fast and efficient-β FeSi2 thin film deposition technology.