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依据腔量子电动力学中自发辐射增强效应，分析了垂直腔面发射半导体激光器的微腔效应，比较了普通开腔和三维封闭腔中的结果。从理论上推出多量子阱垂直腔面发射半导体激光器的速率方程。并讨论了其输出特性即粒子数反转和光输出随泵浦速率变化的关系，同时也讨论了利用微腔效应进一步降低半导体激光器激射阈值的途径。
Based on the enhancement of spontaneous emission in cavity quantum electrodynamics, the microcavity effect of vertical cavity surface-emitting semiconductor laser was analyzed, and the results of ordinary cavity and three-dimensional closed cavity were compared. The quantum rate vertical cavity surface-emitting semiconductor laser is theoretically introduced. The relationship between the output characteristics of the laser and the variation of the output and the pump output is also discussed. The way to reduce the lasing threshold of the semiconductor laser by using the microcavity effect is also discussed.