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采用光刻胶喷涂技术,突破了碲镉汞双色探测器加工的非平面离子注入和金属化开口等工艺.基于分子束外延(MBE)和原位掺杂技术生长的p3-p2-P1型碲镉汞(Hg1-xCdxTe)多层异质结材料,通过MW光电二极管n型注入区的开口刻蚀、非平面的MW/LW同步B+注入、台面侧向钝化和爬坡金属化,得到了同时模式的128×128面阵MW/LW双色探测器.在液氮温度下,MW/LW双色探测器两个波段的光电二极管截止波长λc分别为5.10μm和10.10μm,对应的峰值探测率Dλp*分别为2.02×1011cmHz1/2/W和3.10×1010cmHz1/2/W.通过对同时模式双色探测器材料与芯片结构的优化设计,HgCdTe双色探测器MW向LW、LW向MW的光谱串音分别抑制到了3.8%和4.4%.
The technology of photoresist spraying has been used to break through the non-planar ion implantation and metallization openings of the HgCdTe detector.P3-p2-p-type tellurium grown by molecular beam epitaxy (MBE) and in-situ doping Hg1-xCdxTe multi-layer heterojunction materials were fabricated by opening etching of n-type implanted region of MW photodiode, non-planar MW / LW simultaneous B + implantation, mesa side passivation and hill climbing metallization. At the same time, the cut-off wavelength λc of the two bands of MW / LW two-color detector are 5.10μm and 10.10μm, respectively, corresponding to the peak detection rate Dλp * Respectively 2.02 × 1011cmHz1 / 2 / W and 3.10 × 1010cmHz1 / 2 / W. By optimizing the design of the two-color detector material and chip structure, the spectral crosstalk of HgCdTe two-color detector MW to LW and LW to MW Suppressed to 3.8% and 4.4%.