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研究了在微波等离子体化学气相沉积(MPCVD)条件下纯度为99.5%的C_(60)对金刚石在单晶硅衬底上形核的影响。发现预先涂覆在硅衬底上的C_(60)极大地促进了金刚石的形核,其作用不亚于最近美国西北大学的研究者所采用的C_(70)。提出了C_(60)促进金刚石低压气相形核的机理,并对可能的应用前景进行了讨论。
The effect of C_ (60) purity of 99.5% on the nucleation of diamond on single crystal silicon substrate by microwave plasma chemical vapor deposition (MPCVD) was investigated. It was found that C_ (60) pre-coated on silicon substrate greatly promoted the nucleation of diamond, which was as good as C_ (70) used by researchers at Northwestern University recently. The mechanism of C_ (60) promoting gas phase nucleation at low pressure of diamond was put forward and the possible application prospect was discussed.