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采用磁控溅射工艺制备了V2O5薄膜.通过改变制备工艺中基片温度和氧分压两个条件,研究了薄膜的晶相组成、表观形貌以及氧化物中钒和氧元素的化合价态.当基片温度升高时,V2O5薄膜中颗粒结晶由细长针状转变为平行于基片的片状,V5+状态保持不变,但723K时氧结合能向高键能态移动.氧分压较低时,薄膜表面有部分V4+态存在,但存在较多的高键能氧,此时薄膜中晶粒尺寸较小.随着氧分压的提高,晶粒逐渐长大,钒被氧化为高价态,但此时薄膜中高键能态氧降低.较高的基片温度和氧分压有利于薄膜中晶粒的生长;低氧分压不利于钒的氧化,高氧分压可以将钒氧化为高价态,同时,氧高键能态降低.
The V2O5 thin films were prepared by magnetron sputtering.The crystal phase composition, apparent morphology and valence of vanadium and oxygen in the oxide films were studied by changing the substrate temperature and partial pressure of oxygen in the preparation process. When the temperature of substrate increases, the crystal of V2O5 film changes from slender needle to sheet parallel to the substrate, and the V5 + state remains unchanged, but the oxygen bond moves to the high bond energy state at 723 K. Oxygen When the pressure is low, some V4 + states exist on the surface of the film, but there are more high-energy oxygen atoms, at this time, the grain size of the film is smaller.With the increase of oxygen partial pressure, the grains gradually grow up and the vanadium is oxidized Is the high valence state, but at this moment the high-energy oxygen in the film is reduced.High substrate temperature and partial pressure of oxygen contribute to the growth of the grain in the film. The low partial pressure of oxygen is not conducive to the oxidation of vanadium, Vanadium is oxidized to a high valence state, while the oxygen high bond energy state is reduced.