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二氧化硅在VLSI中起着极其重要的作用.氧化层击穿是MOS VLSI的主要失效机理,并已成为电子设备中可靠性问题的重要原因。难解决的缺陷是圆片加工期间造成的。归因于裂纹、针孔或粒子沾污的有缺陷介质可使氧化层造成局部高电场击穿和漏电流过大。为了分析栅极薄氧化层的介质失效,必须采用先进的分析技术来鉴别失效原因。目前最常用的分析技术有四种:发光显微镜(PEM),液晶检测(LCD)、电子束感生电流(EBIC)和KOH腐蚀法。
Silicon dioxide plays an extremely important role in VLSI. Oxide breakdown is a primary failure mechanism of MOS VLSI and has become a significant cause of reliability issues in electronic devices. Difficult to solve the defect caused by the wafer processing. Defective media due to cracks, pinholes, or particle contamination can cause localized high electric field breakdown and excessive leakage currents in the oxide layer. In order to analyze the dielectric failure of the gate thin oxide layer, advanced analysis techniques must be used to identify the cause of the failure. Currently, there are four types of analytical techniques commonly used: light-emitting microscopy (PEM), liquid crystal inspection (LCD), electron beam induced current (EBIC) and KOH etching.