松下半导体(Panasonic Semiconductor)开发出了可将Si基板上形成的GaN功率晶体管的耐压提高至5倍以上的技术。还有望实现300 V以上的耐压。硅基板上的GaN功率晶体管耐压,本来应该是GaN膜耐压和硅基板耐压加之和,而实际上此前只取决于GaN膜的耐压。因此,松下半导体为提高耐压而采取了增加GaN膜厚度的措施。不过,多晶硅和GaN的晶格常数和热胀系数不同,GaN膜过厚,就会出现开裂等问题。其结果,使GaN膜厚度从数μm左右、耐压从 Panasonic Semiconductor has developed a technology that can increase the withstand voltage of GaN power transistors formed on Si substrates by more than 5 times. It is also expected to achieve over 300 V withstanding voltage. GaN power transistor on the silicon substrate withstanding voltage, should have been the GaN film and silicon substrate withstand voltage plus the sum, in fact, previously only depends on the GaN film withstand voltage. Therefore, Panasonic Semiconductor to increase the pressure to take to increase the thickness of GaN film measures. However, polysilicon and GaN lattice constant and thermal expansion coefficient is different, GaN film is too thick, there will be cracking and other issues. As a result, the thickness of the GaN film is about several micrometers and the breakdown voltage is controlled