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We investigate the effects of strain on the electronic and magnetic properties of ReS_2 monolayer with sulfur vacancies using density functional theory.Unstrained ReS_2 monolayer with monosulfur vacancy(V_s) and disulfur vacancy(V_(2S))both are nonmagnetic.However,as strain increases to 8%,V_S-doped ReS_2 monolayer appears a magnetic half-metal behavior with zero total magnetic moment.In particular,for V_(2S)-doped ReS_2 monolayer,the system becomes a magnetic semiconductor under 6%strain,in which Re atoms at vicinity of vacancy couple anti-ferromagnetically with each other,and continues to show a ferromagnetic metal characteristic with total magnetic moment of 1.60μb under 7%strain.Our results imply that the strain-manipulated ReS_2 monolayer with V_S and V_(2S) can be a possible candidate for new spintronic applications.
We investigate the effects of strain on the electronic and magnetic properties of ReS_2 monolayer with sulfur vacancies using density functional theory. Unstrained ReS_2 monolayer with monosulfur vacancy (V_s) and disulfur vacancy (V_ (2S)) both are nonmagnetic. to V_S-doped ReS_2 monolayer appears a magnetic half-metal behavior with zero total magnetic moment. In particular, for V_ (2S) -doped ReS_2 monolayer, the system becomes a magnetic semiconductor under 6% strain, in which Re atoms at vicinity of vacancy couple anti-ferromagnetically with each other, and continues to show a ferromagnetic metal characteristic with total magnetic moment of 1.60 μb under 7% strain. These results imply that the strain-manipulated ReS_2 monolayer with V_S and V 2S be a possible candidate for new spintronic applications.