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In the magnetotransport measurements of the two-dimensional electron gas (2DEG) in modulation-doped Al0.22Ga0.7sN/C heterostructures, a new magnetoresistance oscillation of the 2DEG is observed at low magnetic fields when the Al0.22Ga0.7sN layer on GaN is partially relaxed. It is thought that the misfit dislocations induced by the partially relaxed Al0.22Ga0.7sN layer modulate the distribution of the piezoelectric polarization-induced charges at the Al0.22Ga0.7sN/GaN heterointerface, and thus produce a strong modulation potential at the heterointerface. The strong modulation potential results in the novel magnetoresistance oscillation of the 2DEG at low magnetic fields.