采用高压高功率的超高频等离子体增强化学气相沉积(VHF-PECVD)技术,在腐蚀后的7059玻璃、低晶化和高晶化的微晶硅(μc-Si:H)p型材料3种衬底上,通过改变沉积时间的方法,高速(沉积速率约为1nm/s)沉积了不同厚度的μc-Si:H薄膜材料。测试其表面形貌及晶化率,比较了不同衬底上高速生长的μc-Si:H薄膜生长机制及微结构的差异,最后得到适于高速沉积pinμc-Si:H太阳电池的μc-Si:Hp型材料应具备的条件。 High-pressure high-power VHF-PECVD technique was used to fabricate 7059 glass, low-crystallinity and high-crystallinity microcrystalline silicon (μc-Si: H) p-type material 3 On the substrate, different thicknesses of μc-Si: H thin film materials were deposited at high speed (deposition rate of about 1 nm / s) by changing the deposition time. The surface morphology and crystallization rate were tested. The growth mechanism and microstructure difference of μc-Si: H thin films grown on different substrates were compared. Finally, the microcrystalline Si : Hp-type materials should have the conditions.