【摘 要】
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The contact-size-dependent characteristic of cutoff frequency f_T in bottom-contact organic thin film transistors(OTFTs) is studied.The effects of electrode thi
【机 构】
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School of Advanced Materials and Nanotechnology,Key Laboratory of Wide Band-Gap Semiconductor Techno
【出 处】
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Chinese Physics Letters
论文部分内容阅读
The contact-size-dependent characteristic of cutoff frequency f_T in bottom-contact organic thin film transistors(OTFTs) is studied.The effects of electrode thickness,field-effect mobility,channel length and gate-source voltage on the contact length(source and drain electrodes’ length) related contact resistance of bottom-contact OTFTs are performed with a modified transmission line model.It is found that the contact resistance increases dramatically when the contact length is scaled down to 200 nm.With the help of the contact length related contact resistance,contact-size-dependent f_T of bottom-contact OTFTs is studied and it is found that f_T increases with the decrease of the contact length in bottom-contact OTFTs.
The contact-size-dependent characteristic of cutoff frequency f_T in bottom-contact organic thin film transistors (OTFTs) is studied. These effects of electrode thickness, field-effect mobility, channel length and gate-source voltage on the contact length drain electrodes’ length) related contact resistance of bottom-contact OTFTs are performed with a modified transmission line model. It is found that the contact resistance increases promised when the contact length is scaled down to 200 nm. contact resistance, contact-size-dependent f_T of bottom-contact OTFTs is studied and it is found that f_T increases with the decrease of the contact length in bottom-contact OTFTs.
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