Nanoscaled spin-dependent tunnelling lines were patteed on doped Si and studied for tunnelling from the SDT ferromagnetic layer through an insulating barrier into Si. The injection contacts have the form of long strips with width and separation, ranging from 100 nm to 2 μm, and are patteed using e-beam lithography. The measured Ⅰ-Ⅴ characteristics versus temperature (80 to 300 K) on the 100 nm scaled devices between the layered-magnetic metals and the semiconductor clearly showed ballistic tunnelling, with weak dependence on the temperature.This is qualitatively different, at elevated temperatures, from 2-μm-wide scaled-up spin-dependent tunnelling structures, where thermal-ionic emission was observed to dominate carrier transport.