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掺铅的碘化铯（Pb：CsI）晶体在400℃空气中进行热处理可以在晶体中诱导产生发光中心，这些发光中心的激发谱与CS－Pb-I体系中一系列化合物的激子吸收谱相吻合．它们被认为是由该晶体在退火过程中所形成的CsPbI3、Cs4PbI6等聚集相产生的．测量了10～30K温度范围内分别在410nm和360nm波长激发下Ph：CsI的发射谱，观察到各发射谱的相对强度随退火时间而变化，这表明在400℃退火温度下晶体中各类Cs－Ph－I聚集相的形成和转化已十分活跃．
Lead-doped cesium iodide (Pb: CsI) crystals in the 400 ℃ air heat treatment can be induced in the crystal luminescence centers, the excitation center of these luminescence centers and CS-Pb-I system, a series of compounds in the exciton absorption spectrum Match. They are believed to result from the aggregate phase of CsPbI3, Cs4PbI6, etc. formed during the annealing of the crystal. The emission spectra of Ph: CsI excited at 410nm and 360nm were measured in the temperature range of 10 ~ 30K. The relative intensity of each emission spectrum was observed to change with the annealing time. This indicates that all kinds of Cs The formation and transformation of the -Ph-I aggregated phase has been very active.