采用VASP程序包模拟计算InGaN量子阱的能带,精细展示了量子阱实空间能带结构。计算结果表明,In原子所在区域出现局域束缚态,导带底与价带顶的简并能级发生分裂,同时量子阱沿垂直结面方向存在分立的能级。此外,针对影响能带的In组分波动、能带弯曲等问题进行探讨,以准确描述其电子行为,从而深入系统地了解InGaN/GaN量子阱的电学光学等特性。 The energy band of the InGaN quantum well is simulated by the VASP package, and the energy band structure of the quantum well is displayed. The calculated results show that the local atomic bound states exist in the region where In atoms exist, and the degenerate energy levels of the conduction band bottom and the valence band top are split. At the same time, the quantum wells have discrete energy levels along the vertical junction. In addition, we discuss the characteristics of the InGaN / GaN quantum wells such as the electro-optic properties of the InGaN / GaN quantum wells, in order to accurately describe the electronic behavior of In-InGaN / GaN quantum wells.