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在长期的生产实践中发现,直拉长苞硅单晶如何减少尾部位错反延伸,是提高单晶成品率的关键之一。按以往的老工艺要求,单晶生长外型一般是葫萝葡形,这样一旦尾部断苞或出现位错,则在断苞处或在位错出现处,就会产生大量位错增殖,而这时晶体尾部的温度仍在850℃以上,位错在这一温度下是可以滑移的,其滑移面为(111),此(111)面与生长轴夹角为19°28′(正向拉
In long-term production practice, it has been found that it is one of the keys to improve the yield of monocrystalline silicon by reducing the tail dislocation anti-extension. According to the old process requirements, the growth of single crystal shape is generally gourd-shaped, so that once the tail buds or dislocations appear, at the broken bud or dislocation appears, it will produce a large number of dislocation proliferation, and The temperature at the tail of the crystal is still above 850 ℃. The dislocations can slip at this temperature. The slip plane is (111), the angle between the (111) plane and the growth axis is 19 ° 28 ’( Positive pull