本文采用光电导光谱分布法和红外光弹法初步研究了硅晶体中禁带宽度与应力的关系。对数块硅晶体进行不同条件的热处理,测试了禁带宽度的变化以及应力状态的变化。发现半导体硅晶体中禁带宽度与应力有明显的对应关系:存在应力时,禁带宽度增加;清除应力后,禁带宽度减少。文中还对实验结果作了理论分析。 In this paper, photoconductive spectroscopy and infrared photoelastic method were used to study the relationship between the forbidden band width and the stress in silicon crystal. Several silicon crystals were heat-treated under different conditions, and the change of the forbidden band width and the change of the stress state were tested. It is found that there is a clear correspondence between the forbidden band width and the stress in the semiconductor silicon crystal. When there is stress, the forbidden band width increases. After the stress is removed, the forbidden band width decreases. The article also made a theoretical analysis of the experimental results.