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采用有限元方法模拟了硅单晶Cz炉内的熔体流动及传输过程,研究了表面张力温度系数对熔体流动和氧浓度的影响。结果表明,自由表面的熔体流动随表面张力温度系数的增大而加强。常规Cz炉内结晶界面的氧浓度呈现先降低后升高的趋势,而带有气体导板的Cz炉内氧浓度一直减小。
The finite element method was used to simulate the melt flow and transfer process in a silicon single crystal Cz furnace. The effect of temperature coefficient of surface tension on melt flow and oxygen concentration was investigated. The results show that the free surface melt flow increases with increasing temperature coefficient of surface tension. Oxygen concentration in the conventional Cz furnace crystallization interface first decreased and then increased, while the oxygen concentration in the Cz furnace with the gas guide plate decreased all the time.