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基于0.18μm CMOS工艺,介绍了一种UHF频段低噪声放大器(LNA)与静电放电(ESD)保护器件的协同设计和电路仿真方法。采用传输线脉冲测试系统,测得ESD二极管的正向热失效击穿电流为4.28A,等效于人体模型5.6kV;反向热失效击穿电流为0.2A,等效于人体模型500V。通过仿真,分析了ESD二极管的电阻、电容特性,给出了其在LNA正常工作情况下的等效电路;结合LNA电路仿真结果,比较了二极管寄生效应对LNA阻抗匹配、增益、噪声系数和线性度等指标的影响,验证了等效电路的正确性。
Based on the 0.18μm CMOS process, a synergetic design and circuit simulation method of a low noise amplifier (LNA) and electrostatic discharge (ESD) protection device in UHF band are introduced. Using transmission line pulse test system, measured the ESD diode forward thermal breakdown current of 4.28A, equivalent to the human body model of 5.6kV; reverse thermal failure current of 0.2A, equivalent to the human body model 500V. Through the simulation, the resistance and capacitance of the ESD diode are analyzed, and the equivalent circuit of the diode in the normal operation of the LNA is given. Based on the simulation results of the LNA circuit, the parasitic effects of the diode on impedance matching, gain, noise figure and linearity Degree and other indicators, verify the correctness of the equivalent circuit.