论文部分内容阅读
将银镜反应与金属催化化学刻蚀相结合,在室温附近成功地制备出了硅纳米线尖端阵列,其长度为4~7μm,中间部分的直径在100~300nm之间。该方法操作简单、高效、无毒、可控以及低成本,且不需要高温、复杂的设备,对环境也没有特殊要求。性能测试结果显示:该硅纳米材料能够有效实现电子发射,开启电场约为2.7V/μm(电流密度10μA/cm2处);硅纳米尖端阵列的场增强因子约为692,可应用在场发射器件之上。
The combination of silver mirror reaction and metal catalytic chemical etching successfully prepared a silicon nanowire tip array near the room temperature with a length of 4~7 μm and a middle portion with a diameter of 100~300 nm. The method is simple, efficient, nontoxic, controllable and low cost, does not require high temperature and complicated equipment, and has no special requirements on the environment. The results of the performance test show that the silicon nanomaterials can effectively emit electrons with an on-field of about 2.7V / μm (current density of 10μA / cm2). The field enhancement factor of the silicon nano-tip array is about 692 and can be used in field emission devices on.