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用拉曼散射谱研究以SiCl4 H2 为气源 ,用射频辉光放电等离子体增强化学气相沉积技术 ,在 2 0 0℃低温下沉积多晶硅薄膜的微结构特征 .结果表明 ,薄膜表层包含有大量微晶相的纳米硅晶粒和非晶相的硅聚合物 ,随射频功率增加 ,晶相结构的成分增大 .另一方面 ,深度拉曼谱分布的研究也显示薄膜的晶化度和晶粒尺度随纵向深度的增加逐渐增大 .因此可以认为 ,在多晶硅薄膜生长的最初阶段 ,空间反应过程对低温晶化起重要作用 .
The Raman scattering spectra were used to study the microstructures of polycrystalline silicon films deposited at low temperature of 2000 ◦ C using SiCl 4 H 2 as the gas source and RF glow discharge plasma enhanced chemical vapor deposition (CVD). The results show that the surface of the film contains a large number of micro The crystalline phase of the nano-silicon grains and the amorphous phase of the silicon polymer, with the RF power increases, the composition of the crystal phase structure increases.On the other hand, the depth of the Raman spectrum distribution studies also showed that the film crystallization degree and the grain The scale increases with the increase of the vertical depth, so it can be considered that in the initial stage of polycrystalline silicon thin film growth, the spatial reaction process plays an important role in the low temperature crystallization.