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分析了影响列阵半导体激光器极限输出功率的因素。利用MOCVD研制了无铝双量子阱列阵半导体激光器。无铝列阵激光器的峰值波长为 940 2nm ,半峰宽为 2nm ,连续输出功率为 10W ,斜率效率为 1 0 9W A。
The factors that affect the limit output power of the array semiconductor laser are analyzed. The aluminum-free double quantum well array semiconductor laser was developed by MOCVD. The peak wavelength of the aluminum-free array laser is 940 2 nm with a half-peak width of 2 nm, a continuous output power of 10 W and a slope efficiency of 109 W A.