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随着GaAs集成电路和微波、光电器件的发展,GaAs/Si异质结的研究已引起了广泛的重视。这种异质结综合了Si和GaAs两者的优点,因此,有希望开辟新的应用。国外利用MBE和MOCVD方法长出了比较满意的GaAs/Si异质结,最近南京电子器件研究所黄善祥等利用传统的汽相外延方法也生长出了GaAs/Si异质结。 在已报导的GaAs/Si异质结实验结果中,一致的看法是在界面处形成了SiAs化合物,但界面的真实组成及其性质如何,尚没有足够的实验和理论验证。作者利用普适参数紧束缚方法,从理论上对GaAs/Si异质结界面进行了研究,计算了界面的GaSi和SiAs化合物的键能E_b、自然键长d、力常数K以及弛豫效应等,结果列于下表。
With the development of GaAs integrated circuits and microwave and optoelectronic devices, the research of GaAs / Si heterojunction has drawn more and more attention. This heterojunction combines the advantages of both Si and GaAs and is therefore promising to open up new applications. Abroad MBE and MOCVD methods have been used to grow more satisfactory GaAs / Si heterojunction. Recently, Huang Shanxiang et al. Of Nanjing Institute of Electronic Devices also used the traditional vapor phase epitaxy to grow GaAs / Si heterojunction. In the reported GaAs / Si heterojunction experimental results, it is agreed that SiAs compounds are formed at the interface, but the actual composition of the interface and its nature, there is not enough experimental and theoretical verification. The authors studied the GaAs / Si heterojunction interface theoretically by using the universal binding method and calculated the bond energies E_b, natural bond length d, force constant K and relaxation effect of the GaSi and SiAs compounds at the interface The results are shown in the following table.