Organic light emitting diodes are fabricated based on metal-free phthaIocyanine (H2Pc) doped into tris-(8-hydroxyquinoline) aluminium (Alq3 ). The device structure is ITO/NPB (30 nm)/Alq3: H2Pc(30 nm)/BCP(20 nm)/Alq3(20nm)/Al. In the light-emitting layers, H2Pc concentrations are varied from 0wt% to 100wt%. The emis-sions around 708 nm and 800nm appear at low concentrations, while the emissions around 910nto and 930nm appear at high concentrations. The emissions around 708 nm and 800nm are from H2Pc monomers. The emissions around 910nm and 930nm are from H2Pc aggregates. The dominant mechanism in the doped devices is direct charge trapping,