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本文讲述一种采用电测试来评估MOS LSI电路工艺的方法。因为器件的主要性能参数如阈值电压、放大系数等可以由工艺参数(如栅长、栅氧化层厚度、结深、沟道掺杂浓度等)来决定。所以我们采用电测量方法得到这些工艺参数,并把所得之值与用光学、工艺检测手段测得的值作比较。按照本文的分析,芯片上阈值电压值的不同主要是由于栅氧化层厚度不同引起的。而短沟道区内,阈值电压值不规则地下降则是由于MOS管穿通所造成。
This article describes a method for using electrical testing to evaluate MOS LSI circuit technology. Because the device's main performance parameters such as threshold voltage, amplification factor, etc. can be determined by process parameters (such as gate length, gate oxide thickness, junction depth, channel dopant concentration, etc.). Therefore, we use electrical measurements to obtain these process parameters and compare the values obtained with those measured using optical and process measurements. According to the analysis of this article, the difference of the threshold voltage value on the chip is mainly caused by the difference of gate oxide thickness. The short-channel area, the threshold voltage value is irregularly dropped due to the MOS tube through caused.