由非晶硅氢(a-Si:H)和硅氮氢(a-SiN_x:H)交替超薄层构成的多层结构,是一种二维半导体材料,在物理上,是极为有趣的。更有趣的是,当a-Si:H很薄时,该材料的光隙明显地增加,还发现,电荷载流子从低功函数层向高功函数层流动时产生空间电荷掺杂效应。 对非晶硅氢结构已进行过许多研究。本工作的目标,在于使用高分辨电子显微镜直接 A multi-layer structure consisting of alternating thin layers of a-Si: H and a-SiNx: H is a two-dimensional semiconductor material that is extremely interesting in physics. More interestingly, when a-Si: H is very thin, the material’s optical gap is significantly increased. It is also found that the charge carriers create a space charge doping effect when flowing from the low-work function layer to the high-work function layer. Much research has been conducted on the structure of amorphous silicon hydride. The goal of this work is to use high-resolution electron microscopy directly